Thermal Load Influence during the Formation of Al-Al Contacts on the Electrical Parameters of the Integrated Circuits with Aluminum-Polysilicon Contacts

This work is devoted to establishing the effect of using rapid thermal processing (RTP) method (450 °C, 7 s) form an ohmic contact between two layers aluminum metallization on electrical parameters and reliability integrated circuits. The resistance values chains aluminum-silicon, aluminum-polysilicon, polysilicon-silicon n+, aluminum-silicon current-voltage characteristics tested bipolar transistors, as well results analyses by conducting field tests were chosen analyzed this microcircuit. Comparison these was carried out with respect microcircuits manufactured standard RTP 20 min) contact. An analysis value various showed that, regardless type treatment, all chains, exception aluminum-polysilicon chain, have almost same resistance. By analyzing elemental composition cleavage in area scanning electron microscopy, it found that during heat depth penetration into polysilicon 2 times less than its formation due a 2-fold reduction time exposure high temperature compared process. leads lower concentration silicon result higher polysilicon. currentvoltage they are identical, except for course direct branch base current from emitter-base voltage. deviation linear nature dependence region their low voltage (£ 200 mV) case Al-Si Al-Al contacts use long-term treatments predominance generation-recombination associated increased density traps depleted surface semiconductor. ideal behavior versus emitter-based maintained applying eliminating both depletion layer products does not depend layers.